High-quality GaN on intentionally roughened c-sapphire
نویسندگان
چکیده
منابع مشابه
Nitrogen-Polar (0001¯) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer
We demonstrate growing nitrogen-polar (N-polar) GaN epilayer on c-plane sapphire using a thin AlN buffer layer by metalorganic chemical vapor deposition. We have studied the influence of the AlN buffer layer on the polarity, crystalline quality, and surface morphology of the GaN epilayer and found that the growth temperature of the AlN buffer layer played a critical role in the growth of the Ga...
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We demonstrate a thin-film flip-chip (TFFC) process for LEDs grown on freestanding c-plane GaN substrates. LEDs are transferred from a bulk GaN substrate to a sapphire submount via a photoelectrochemical (PEC) undercut etch. This PEC liftoff method allows for substrate reuse and exposes the N-face of the LEDs for additional roughening. The LEDs emitted at a wavelength of 432 nm with a turn on v...
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AlGaN/GaN heterojunction field effect transistors (HFETs) on C-doped semi-insulating GaN buffers on sapphire substrates with high breakdown voltage (BV) and low specific on-resistance (ARon) were fabricated. A BV of ~ 1600 V and an ARon of ~ 4 mW-cm2 was achieved from the fabricated devices without any field plate design. This result is a record achievement for AlGaN/GaN HFETs on sapphire subst...
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Thick GaN films were deposited with growth rates as high as 250 mm/h by the direct reaction of ammonia and gallium vapor at 1240 °C. The characteristics of our films are comparable to those of typical thin films grown by metal organic chemical vapor deposition or molecular beam epitaxy. Grown under identical conditions, films on ~0001! sapphire and on ~0001! 6H–SiC were compared in terms of the...
متن کاملHigh quality AlGaN epilayers grown on sapphire using SiNx interlayers
We have investigated the optimization of Al0.2Ga0.8N layers directly grown on sapphire by metalorganic vapor phase epitaxy (MOVPE). The quality of the AlGaN epilayers was improved by in situ nano-masking employing ultra-thin SiNx interlayers. Transmission electron microscopy (TEM) investigations reveal an enormous reduction of edge-type dislocations by SiNx nano-masking. Furthermore, formation ...
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ژورنال
عنوان ژورنال: The European Physical Journal Applied Physics
سال: 2003
ISSN: 1286-0042,1286-0050
DOI: 10.1051/epjap:2003012